| PART |
Description |
Maker |
| BGD902MI BGD902 BGD902_902MI_6 |
860 MHz, 18.5 dB gain power
From old datasheet system
|
Philips
|
| BGD904L |
860 MHz, 20 dB gain power doubler amplifier
|
Philips
|
| BGD812 BGD81201 |
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors
Philips
|
| BGD885 BGD885_7 BGD88501 |
860 MHz, 17 dB gain power doubler amplifier
From old datasheet system
|
NXP Semiconductors
Philips
|
| BGD816L BGD816L_5 BGD816L01 |
860 MHz, 21.5 dB gain power doubler amplifier
From old datasheet system
|
NXP Semiconductors
Philips
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| MHW8205 |
MHW8205 860 MHz, 20.2 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| SPA860/85/13/0/DSNT SPA860/85/14/0/DSNT SPA860/85/ |
860 MHz - 960 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 12.5 dBi GAIN, 85 deg 3dB BEAMWIDTH
860 MHz - 960 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 14 dBi GAIN, 85 deg 3dB BEAMWIDTH
860 MHz - 960 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 10 dBi GAIN, 85 deg 3dB BEAMWIDTH
|
Vishay Intertechnology, Inc.
|
| MHW9182 MHW7182 MHW8182 |
18 dB GAIN 750/860/1000 MHz 110/128/152 CHANNEL CATV AMPLIFIERS
|
MOTOROLA[Motorola, Inc]
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
| BGD802 |
Hybrid amplifier module operating at a supply voltage of 24 V (DC). BGD802<SOT115J|<<<1<Always Pb-free,;BGD802/02<SOT115J|<<<1<Always Pb-free,;
860 MHz, 18.5 dB gain power doubler amplifier
|
NXP Semiconductors N.V.
|
| HW8185 |
40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
